Nexperia PDTC144VT,215

Nexperia · Transistors (BJTs) · MPN PDTC144VT,215

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO15V
DC Current Gain40
Vce Saturation(VCE(sat))150mV
Operating Temperature-65℃~+150℃
Current - Collector(Ic)100mA
Input Resistor47kΩ
Resistor Ratio0.26
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))1V@100uA,5V
Input Voltage (VI(on)@Ic,Vce)6V@2mA,300mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-23

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