Nexperia PDTC143ZQB-QZ

Nexperia · Transistors (BJTs) · MPN PDTC143ZQB-QZ

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain100
Emitter-Base Voltage VEBO5V
Vce Saturation(VCE(sat))100mV
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Input Resistor4.7kΩ
Resistor Ratio10
Pd - Power Dissipation340mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

50V 100 100mA 340mW 1 NPN (Pre-Biased) NPN SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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