Nexperia PDTC143TM,315

Nexperia · Transistors (BJTs) · MPN PDTC143TM,315

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Vce Saturation(VCE(sat))100mV
Operating Temperature-65℃~+150℃
Current - Collector(Ic)100mA
Input Resistor4.7kΩ
typeNPN
Number1 NPN (Pre-Biased)
Pd - Power Dissipation250mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-883

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