Nexperia PDTC143EQAZ

Nexperia · Transistors (BJTs) · MPN PDTC143EQAZ

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain30
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation440mW
Voltage - Input(Max)(VI(off))1.1V@100uA,5V
Input Voltage (VI(on)@Ic,Vce)2.5V@20mA,0.3V

Technical details

50V 30 100mA 1 NPN (Pre-Biased) 440mW DFN1010D-3 Single, Pre-Biased Bipolar Transistors RoHS

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