Nexperia PDTC124ET-QR

Nexperia · Transistors (BJTs) · MPN PDTC124ET-QR

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain60
Emitter-Base Voltage VEBO10V
Vce Saturation(VCE(sat))100mV
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))800mV@100uA,5V

Technical details

50V 60 100mA 250mW 1 NPN (Pre-Biased) NPN SC-70 Single, Pre-Biased Bipolar Transistors RoHS

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