Nexperia PDTC124ET,215

Nexperia · Transistors (BJTs) · MPN PDTC124ET,215

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO10V
DC Current Gain60
Vce Saturation(VCE(sat))100mV
Operating Temperature-65℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation250mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount TO-236AB

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