Nexperia PDTC123YT-QR

Nexperia · Transistors (BJTs) · MPN PDTC123YT-QR

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Specifications

Collector - Emitter Voltage VCEO50V
Operating Temperature-65℃~+150℃
Input Resistor2.86kΩ
Resistor Ratio5.5
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))750mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)2.5V@20mA,300mV

Technical details

50V 250mW TO-236AB Single, Pre-Biased Bipolar Transistors RoHS

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