Nexperia PDTC123TT,215

Nexperia · Transistors (BJTs) · MPN PDTC123TT,215

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain30
Vce Saturation(VCE(sat))150mV
Operating Temperature-65℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor2.2kΩ
Resistor Ratio-
Pd - Power Dissipation250mW

Technical details

50V 30 100mA 250mW NPN 1 NPN (Pre-Biased) SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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