Nexperia PDTC123JQAZ

Nexperia · Transistors (BJTs) · MPN PDTC123JQAZ

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain100
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor2.2kΩ
Resistor Ratio21
Number1 NPN (Pre-Biased)
Pd - Power Dissipation280mW

Technical details

50V 100 100mA 1 NPN (Pre-Biased) 280mW DFN1010-3 Single, Pre-Biased Bipolar Transistors RoHS

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