Nexperia · Transistors (BJTs) · MPN PDTC115ET,215
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 80 |
| Vce Saturation(VCE(sat)) | 150mV |
| Operating Temperature | -65℃~+150℃ |
| Current - Collector(Ic) | 20mA |
| Input Resistor | 100kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 250mW |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 3V@1mA,0.3V |
Pre-Biased Bipolar Transistor (BJT) 50V 20mA 250mW Surface Mount SOT-23