Nexperia PDTC114YT,215

Nexperia · Transistors (BJTs) · MPN PDTC114YT,215

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Vce Saturation(VCE(sat))100mV
Operating Temperature-40℃~+150℃
Current - Collector(Ic)100mA
Input Resistor10kΩ
Resistor Ratio5.7
Pd - Power Dissipation250mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-23

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