Nexperia PDTC114EU-QX

Nexperia · Transistors (BJTs) · MPN PDTC114EU-QX

No reviews yet — be the first to review Nexperia PDTC114EU-QX.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Emitter-Base Voltage VEBO10V
Vce Saturation(VCE(sat))150mV
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Input Resistor10kΩ
Resistor Ratio1.2
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))800mV@100uA,5V

Technical details

50V 30 100mA 200mW 1 NPN (Pre-Biased) NPN SOT-323 Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)