Nexperia · Transistors (BJTs) · MPN PDTC114ET-QR
No reviews yet — be the first to review Nexperia PDTC114ET-QR.
| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 30 |
| Emitter-Base Voltage VEBO | 10V |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -65℃~+150℃ |
| Number | 1 NPN (Pre-Biased) |
| Resistor Ratio | 1 |
| type | NPN |
| Pd - Power Dissipation | 250mW |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@10mA,0.3V |
| Voltage - Input(Max)(VI(off)) | 800mV@100uA,5V |
50V 30 100mA 1 NPN (Pre-Biased) NPN 250mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS