Nexperia PDTB143EQAZ

Nexperia · Transistors (BJTs) · MPN PDTB143EQAZ

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain60
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation575mW

Technical details

50V 60 500mA 1 PNP Pre-Biased 575mW DFN1010-3 Single, Pre-Biased Bipolar Transistors RoHS

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