Nexperia PDTB123YQAZ

Nexperia · Transistors (BJTs) · MPN PDTB123YQAZ

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain70
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Input Resistor2.2kΩ
Resistor Ratio4.55
Number1 PNP Pre-Biased
Pd - Power Dissipation325mW

Technical details

50V 70 500mA 1 PNP Pre-Biased 325mW DFN1010-3 Single, Pre-Biased Bipolar Transistors RoHS

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