Nexperia PDTB123TT,215

Nexperia · Transistors (BJTs) · MPN PDTB123TT,215

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain100
Operating Temperature-65℃~+150℃
Current - Collector(Ic)500mA
Input Resistor2.2kΩ
Number-
Pd - Power Dissipation250mW

Technical details

50V 100 500mA 250mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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