Nexperia · Transistors (BJTs) · MPN PDTB114ETR
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 140MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 10V |
| DC Current Gain | 70 |
| Vce Saturation(VCE(sat)) | 100mV |
| Operating Temperature | -55℃~+175℃ |
| Current - Collector(Ic) | 500mA |
| Input Resistor | 10kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 460mW |
| Voltage - Input(Max)(VI(off)) | 600mV |
Pre-Biased Bipolar Transistor (BJT) 50V 500mA 460mW Surface Mount SOT-23