Nexperia · Transistors (BJTs) · MPN PDTB113EUX
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 33 |
| Operating Temperature | -55℃~+175℃ |
| Current - Collector(Ic) | 500mA |
| Input Resistor | 1kΩ |
| Resistor Ratio | 1 |
| Number | - |
| Pd - Power Dissipation | 425mW |
50V 33 500mA 425mW SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS