Nexperia PDTA124XQBZ

Nexperia · Transistors (BJTs) · MPN PDTA124XQBZ

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain80
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor22kΩ
Resistor Ratio2.13
Number1 PNP Pre-Biased
Pd - Power Dissipation340mW

Technical details

50V 80 100mA 1 PNP Pre-Biased 340mW DFN-3(1.1x1) Single, Pre-Biased Bipolar Transistors RoHS

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