Nexperia PDTA123TM,315

Nexperia · Transistors (BJTs) · MPN PDTA123TM,315

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Specifications

Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain30
Operating Temperature-65℃~+150℃
Current - Collector(Ic)100mA
Input Resistor2.86kΩ
typePNP
Number1 PNP Pre-Biased
Pd - Power Dissipation250mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 250mW Surface Mount SOT-883

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