Nexperia PDTA123EM,315

Nexperia · Transistors (BJTs) · MPN PDTA123EM,315

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain30
Operating Temperature-65℃~+150℃
Current - Collector(Ic)100mA
Input Resistor2.2kΩ
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation250mW

Technical details

50V 30 100mA 1 PNP Pre-Biased 250mW SOT-883-3 Single, Pre-Biased Bipolar Transistors RoHS

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