Nexperia PDTA114YQAZ

Nexperia · Transistors (BJTs) · MPN PDTA114YQAZ

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain100
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor10kΩ
Resistor Ratio4.7
Number1 PNP Pre-Biased
Pd - Power Dissipation440mW

Technical details

50V 100 100mA 1 PNP Pre-Biased 440mW DFN1010-3 Single, Pre-Biased Bipolar Transistors RoHS

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