Nexperia · Transistors (BJTs) · MPN PDTA114TU,115
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 200 |
| Vce Saturation(VCE(sat)) | 150mV |
| Operating Temperature | -65℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Input Resistor | 10kΩ |
| type | PNP |
| Number | 1 PNP Pre-Biased |
| Pd - Power Dissipation | 200mW |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-323