Nexperia PBSS8110Y,115

Nexperia · Transistors (BJTs) · MPN PBSS8110Y,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain150
Pd - Power Dissipation625mW
typeNPN
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))200mV

Technical details

100V 150 NPN 1A SOT-363 Single Bipolar Transistors RoHS

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