Nexperia PBSS5630PA,115

Nexperia · Transistors (BJTs) · MPN PBSS5630PA,115

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO7V
DC Current Gain230
Pd - Power Dissipation1.4W
Number1 PNP
typePNP
Current - Collector(Ic)6A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))235mV

Technical details

Bipolar (BJT) Transistor PNP 30V 6A 80MHz 1.4W Surface Mount SOT-1061

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