Nexperia PBSS5350T-QR

Nexperia · Transistors (BJTs) · MPN PBSS5350T-QR

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain200
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
Number1 PNP
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))270mV
Operating Temperature-65℃~+150℃

Technical details

50V 200 1 PNP PNP 2A CFP-3 Single Bipolar Transistors RoHS

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