Nexperia PBSS5330X,115

Nexperia · Transistors (BJTs) · MPN PBSS5330X,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
DC Current Gain175
Pd - Power Dissipation1.6W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))320mV

Technical details

Bipolar (BJT) Transistor PNP 30V 3A 100MHz 1.6W Surface Mount SOT-89

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