Nexperia · Transistors (BJTs) · MPN PBSS5250TH-QR
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| Transition frequency(fT) | 100MHz |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 7V |
| Pd - Power Dissipation | 600mW |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 2A |
| Vce Saturation(VCE(sat)) | 300mV |
| Operating Temperature | -55℃~+175℃ |
50V PNP 1 PNP 2A TO-236AB Single Bipolar Transistors RoHS