Nexperia PBSS5250TH-QR

Nexperia · Transistors (BJTs) · MPN PBSS5250TH-QR

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Specifications

Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation600mW
typePNP
Number1 PNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+175℃

Technical details

50V PNP 1 PNP 2A TO-236AB Single Bipolar Transistors RoHS

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