Nexperia · Transistors (BJTs) · MPN PBSS5230T-QR
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| Current - Collector Cutoff | 50uA |
|---|---|
| Transition frequency(fT) | 200MHz |
| Collector - Emitter Voltage VCEO | 30V |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 480mW |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 2A |
| Vce Saturation(VCE(sat)) | 350mV |
| Operating Temperature | -65℃~+150℃ |
30V PNP 1 PNP 2A TO-236AB Single Bipolar Transistors RoHS