Nexperia PBSS5230T-QR

Nexperia · Transistors (BJTs) · MPN PBSS5230T-QR

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation480mW
typePNP
Number1 PNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))350mV
Operating Temperature-65℃~+150℃

Technical details

30V PNP 1 PNP 2A TO-236AB Single Bipolar Transistors RoHS

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