Nexperia PBSS5230PAP,115

Nexperia · Transistors (BJTs) · MPN PBSS5230PAP,115

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Specifications

Current - Collector Cutoff100nA
DC Current Gain160
Pd - Power Dissipation510mW
Collector - Emitter Voltage VCEO30V
Transition frequency(fT)95MHz
Vce Saturation(VCE(sat))295mV
typePNP
Current - Collector(Ic)2A
Operating Temperature-

Technical details

160 510mW 30V PNP 2A HUSON-6(2x2) Bipolar Transistor Arrays RoHS

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