Nexperia PBSS5160V,115

Nexperia · Transistors (BJTs) · MPN PBSS5160V,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain100
Pd - Power Dissipation500mW
typePNP
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))220mV

Technical details

60V 100 PNP 1A SOT-666-6 Single Bipolar Transistors RoHS

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