Nexperia PBSS5160PAP,115

Nexperia · Transistors (BJTs) · MPN PBSS5160PAP,115

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Specifications

Current - Collector Cutoff100nA
DC Current Gain120
Pd - Power Dissipation510mW
Collector - Emitter Voltage VCEO60V
Transition frequency(fT)125MHz
Vce Saturation(VCE(sat))240mV
typePNP
Current - Collector(Ic)1A
Operating Temperature-

Technical details

120 510mW 60V PNP 1A HUSON-6(2x2) Bipolar Transistor Arrays RoHS

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