Nexperia · Transistors (BJTs) · MPN PBSS5160DS,115
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 100 |
| Pd - Power Dissipation | 370mW |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 150MHz |
| Vce Saturation(VCE(sat)) | 250mV |
| type | PNP |
| Number | 2 PNP |
| Current - Collector(Ic) | 1A |
| Operating Temperature | -65℃~+150℃ |
Bipolar (BJT) Transistor PNP 60V 1A 150MHz 370mW Surface Mount SOT-457