Nexperia PBSS5130PAP,115

Nexperia · Transistors (BJTs) · MPN PBSS5130PAP,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain170
Pd - Power Dissipation510mW
typePNP
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))160mV

Technical details

30V 170 PNP 1A HUSON-6(2x2) Single Bipolar Transistors RoHS

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