Nexperia PBSS4350X,115

Nexperia · Transistors (BJTs) · MPN PBSS4350X,115

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation1.6W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))370mV

Technical details

Bipolar (BJT) Transistor NPN 50V 3A 100MHz 1.6W Surface Mount SOT-89

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