Nexperia PBSS4350TVL

Nexperia · Transistors (BJTs) · MPN PBSS4350TVL

No reviews yet — be the first to review Nexperia PBSS4350TVL.

Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation540mW
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))280mV

Technical details

Bipolar (BJT) Transistor NPN 50V 2A 100MHz 540mW Surface Mount SOT-23

Related Transistors (BJTs)