Nexperia PBSS4350SPN,115

Nexperia · Transistors (BJTs) · MPN PBSS4350SPN,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO50V
DC Current Gain180
Pd - Power Dissipation1.2W
typeNPN+PNP
Current - Collector(Ic)2.7A
Operating Temperature-
Vce Saturation(VCE(sat))240mV

Technical details

50V 180 NPN+PNP 2.7A SO-8 Single Bipolar Transistors RoHS

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