Nexperia PBSS4260PANSX

Nexperia · Transistors (BJTs) · MPN PBSS4260PANSX

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Specifications

Current - Collector Cutoff100nA
DC Current Gain120
Pd - Power Dissipation370mW
Collector - Emitter Voltage VCEO60V
Transition frequency(fT)140MHz
Vce Saturation(VCE(sat))260mV
typeNPN
Current - Collector(Ic)2A
Operating Temperature-

Technical details

120 370mW 60V NPN 2A DFN2020D-6 Bipolar Transistor Arrays RoHS

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