Nexperia PBSS4230PANP,115

Nexperia · Transistors (BJTs) · MPN PBSS4230PANP,115

No reviews yet — be the first to review Nexperia PBSS4230PANP,115.

Specifications

Current - Collector Cutoff100nA
DC Current Gain200
Pd - Power Dissipation510mW
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO7V
Transition frequency(fT)120MHz;95MHz
Vce Saturation(VCE(sat))295mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 30V 2A 120MHz;;;95MHz 510mW Surface Mount DFN2020-6

Related Transistors (BJTs)