Nexperia PBSS4160XX

Nexperia · Transistors (BJTs) · MPN PBSS4160XX

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain170
Pd - Power Dissipation1.35W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))200mV

Technical details

60V 170 NPN 1A SOT-89-3 Single Bipolar Transistors RoHS

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