Nexperia PBSS4160TVL

Nexperia · Transistors (BJTs) · MPN PBSS4160TVL

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)220MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain250
Pd - Power Dissipation1.25W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

60V 250 1 NPN NPN 1A SOT-23 Single Bipolar Transistors RoHS

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