Nexperia PBSS4160QAZ

Nexperia · Transistors (BJTs) · MPN PBSS4160QAZ

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain85
Pd - Power Dissipation740mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))235mV

Technical details

60V 85 1 NPN NPN 1A DFN1010-3 Single Bipolar Transistors RoHS

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