Nexperia PBSS4160PANSX

Nexperia · Transistors (BJTs) · MPN PBSS4160PANSX

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)175MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain110
Pd - Power Dissipation1.45W
Number2 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))240mV

Technical details

Bipolar (BJT) Transistor NPN 60V 1A 175MHz 1450mW Surface Mount DFN-6D(2x2)

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