Nexperia PBSS4160PANPS

Nexperia · Transistors (BJTs) · MPN PBSS4160PANPS

No reviews yet — be the first to review Nexperia PBSS4160PANPS.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)175MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation1.45W
Number1 NPN + 1 PNP
typeNPN+PNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃

Technical details

60V 1 NPN + 1 PNP NPN+PNP 1A Single Bipolar Transistors RoHS

Related Transistors (BJTs)