Nexperia PBSS4160PANP,115

Nexperia · Transistors (BJTs) · MPN PBSS4160PANP,115

No reviews yet — be the first to review Nexperia PBSS4160PANP,115.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)175MHz;125MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain150
Pd - Power Dissipation510mW
typeNPN+PNP
Current - Collector(Ic)1A
Operating Temperature-
Vce Saturation(VCE(sat))240mV

Technical details

60V 150 NPN+PNP 1A HUSON-6(2x2) Single Bipolar Transistors RoHS

Related Transistors (BJTs)