Nexperia PBSS4160DSZ

Nexperia · Transistors (BJTs) · MPN PBSS4160DSZ

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Specifications

Current - Collector Cutoff100nA
DC Current Gain250
Pd - Power Dissipation700mW
Collector - Emitter Voltage VCEO60V
Transition frequency(fT)220MHz
Vce Saturation(VCE(sat))200mV
typeNPN
Current - Collector(Ic)1A
Operating Temperature-

Technical details

250 700mW 60V NPN 1A SOT-457 Bipolar Transistor Arrays RoHS

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