Nexperia PBSS4160DSH

Nexperia · Transistors (BJTs) · MPN PBSS4160DSH

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Specifications

Current - Collector Cutoff100nA
DC Current Gain200
Pd - Power Dissipation290mW
Collector - Emitter Voltage VCEO60V
Transition frequency(fT)220MHz
Vce Saturation(VCE(sat))200mV
typeNPN
Current - Collector(Ic)870mA
Operating Temperature-

Technical details

200 290mW 60V NPN 870mA SC-74 Bipolar Transistor Arrays RoHS

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