Nexperia PBSS4140DPNF

Nexperia · Transistors (BJTs) · MPN PBSS4140DPNF

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Specifications

Current - Collector Cutoff100nA
DC Current Gain300
Pd - Power Dissipation370mW
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)150MHz
Vce Saturation(VCE(sat))500mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 40V 1A 150MHz 370mW Surface Mount SOT-457

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