Nexperia PBSS4140DPN-QF

Nexperia · Transistors (BJTs) · MPN PBSS4140DPN-QF

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Specifications

Current - Collector Cutoff50uA
Pd - Power Dissipation600mW
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)150MHz
Vce Saturation(VCE(sat))500mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃

Technical details

600mW 40V NPN+PNP 1A TSOP-6 Bipolar Transistor Arrays RoHS

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