Nexperia PBSS4130PANP,115

Nexperia · Transistors (BJTs) · MPN PBSS4130PANP,115

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Specifications

Current - Collector Cutoff100nA
DC Current Gain210
Pd - Power Dissipation510mW
Collector - Emitter Voltage VCEO30V
Transition frequency(fT)165MHz;125MHz
Vce Saturation(VCE(sat))150mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)1A
Operating Temperature-

Technical details

210 510mW 30V NPN+PNP 1A HUSON-6(2x2) Bipolar Transistor Arrays RoHS

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